EFFECTS OF LOW-TEMPERATURE PERIODIC ANNEALING ON THE DEEP-LEVEL DEFECTS IN 200 KEV PROTON IRRADIATED ALGAAS-GAAS SOLAR-CELLS

被引：4

作者：

LI, SS ^{[1
]}

CHIU, TT ^{[1
]}

LOO, RY ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

关键词：

D O I：

10.1109/TNS.1981.4335685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4113 / 4118

页数：6

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