GROWTH AND CHARACTERIZATION OF ISOELECTRONICALLY DOUBLE-DOPED SEMIINSULATING INP(FE) SINGLE-CRYSTALS

被引:5
作者
KATSUI, A
TOHNO, S
机构
关键词
D O I
10.1016/0022-0248(86)90450-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:287 / 290
页数:4
相关论文
共 14 条
[1]   GROWTH OF ANTIMONY DOPED INP SINGLE-CRYSTAL [J].
BALLMAN, AA ;
BROWN, H ;
BLITZER, LD .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (03) :516-518
[2]   ROUND ROBIN STUDY OF IMPURITY ANALYSIS IN GALLIUM-ARSENIDE USING SECONDARY ION MASS-SPECTROMETRY [J].
HOMMA, Y ;
KUROSAWA, S ;
YOSHIOKA, Y ;
SHIBATA, M ;
NOMURA, K ;
NAKAMURA, Y .
ANALYTICAL CHEMISTRY, 1985, 57 (14) :2928-2934
[3]   DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].
JACOB, G ;
DUSEAUX, M ;
FARGES, JP ;
VANDENBOOM, MMB ;
ROKSNOER, PJ .
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424
[4]  
JACOB G, 1982, SEMIINSULATING 3 5 M, P2
[5]   THE THEORY AND PRACTICE OF DISLOCATION REDUCTION IN GAAS AND INP [J].
JORDAN, AS ;
VONNEIDA, AR ;
CARUSO, R .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :555-573
[6]   A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].
JORDAN, AS ;
CARUSO, R ;
VONNEIDA, AR .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637
[7]   REDISTRIBUTION OF FE IN THERMALLY ANNEALED SEMI-INSULATING INP(FE) - DETERMINATION OF FE DIFFUSION-COEFFICIENT IN INP [J].
KAMADA, H ;
SHINOYAMA, S ;
KATSUI, A .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2881-2884
[8]  
KATSUI A, 1986, J CRYST GROWTH, V74, P211
[9]   IRON AND CHROMIUM REDISTRIBUTION IN SEMI-INSULATING INP [J].
OBERSTAR, JD ;
STREETMAN, BG ;
BAKER, JE ;
WILLIAMS, P .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1814-1817
[10]  
SHINOYAMA S, 1980, JPN J APPL PHYS, V19, P331