FROM PHOTOCORROSION TO PHOTOELECTROCHEMICAL ETCHING

被引:13
作者
DECKER, F [1 ]
SOLTZ, DA [1 ]
CESCATO, L [1 ]
机构
[1] UNICAMP,INST PHYS,CAMPINAS,SP,BRAZIL
关键词
PHOTOETCHING; SEMICONDUCTORS; INP; MICROSTRUCTURES; PHOTOELECTROCHEMISTRY;
D O I
10.1016/0013-4686(93)80013-P
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A short report is given on the technique of photoelectrochemical etching. The basic principles and the existing literature on photoetching are reviewed. It appears that this technique has a number of applications in semiconductor characterization, in optics, in electronic devices fabrication and in solar energy conversion devices. Special attention is devoted to the photoelectrochemical etching processes of III-V compound semiconductors and experimental results of the etching of InP are reported. The micro-reliefs obtained on InP by photoetching are described and possible applications are discussed.
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页码:95 / 99
页数:5
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