LOW-ENERGY-ELECTRON MICROSCOPY STUDIES OF GE AND AG GROWTH ON SI(111)

In this paper we demonstrate how low energy electron microscopy can be used to study in situ, and in real time, the growth of thin films on single-crystal surfaces. By studying the growth of Ge and Ag on both the clean and the Sb-terminated Si(lll) surface we show how nucleation, growth, island formation, island shapes, thermal stability and the formation of dislocations in the grown films may be observed. Pre-adsorption of Sb strongly modifies the growth of Ge and Ag films on Si(lll), leading to more uniform coverage and smoother films in both cases.