THE INFLUENCE OF INCONGRUENT DECOMPOSITION AND OXYGEN-CHEMISORPTION ON THE TEMPERATURE AND PRESSURE-DEPENDENCE OF THE CONDUCTIVITY OF ZINC-OXIDE FILMS

被引：12

作者：

BONASEWICZ, P

HIRSCHWALD, W

NEUMANN, G

机构：

来源：

APPLIED SURFACE SCIENCE | 1987年 / 28卷 / 02期

关键词：

D O I：

10.1016/0169-4332(87)90060-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：135 / 146

页数：12

共 8 条

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THIN SOLID FILMS, 1986, 142 (01) :77-82

[2] THE INVESTIGATION OF THE PRESSURE AND TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF THIN ZINC-OXIDE FILMS WITH HIGH RESISTANCES [J].

BONASEWICZ, P ;

HIRSCHWALD, W ;

NEUMANN, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1986, 97 (02) :593-599

[3]

Brown H. E., 1976, ZINC OXIDE PROPERTIE

[4] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].

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1600, (119)

[5] GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].

GROVENOR, CRM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (21) :4079-4119

[6] ELECTRONIC PROCESSES IN ZINC OXIDE [J].

HEILAND, G ;

MOLLWO, E ;

STOCKMANN, F .

SOLID STATE PHYSICS, 1959, 8 :191-323

[7]

HIRSCHWALD W, 1981, CURRENT TOPICS MATER, V7, P143

[8] ON THE DEFECT STRUCTURE OF ZINC-DOPED ZINC-OXIDE [J].

NEUMANN, G .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02) :605-612

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