GROWTH-KINETICS OF PALLADIUM SILICIDES FORMED BY RAPID THERMAL ANNEALING

[1] TRANSIENT ANNEALING AS A TOOL FOR THE INVESTIGATION OF THIN-FILM SUBSTRATE SOLID-PHASE REACTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1234 - 1239

[2] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[3] GROWTH-KINETICS OF PD2SI FROM EVAPORATED AND SPUTTER-DEPOSITED FILMS [J]. THIN SOLID FILMS, 1981, 79 (01) : 51 - 60

[4] CHEUNG NW, 1980, ELECTROCHEMICAL S PV, V802, P494

[5] COHEN SA, 1984, MATER RES SOC S P, V23, P321

[6] DHEURLE FM, 1986, P MAT RES SOC S, V52, P261

[7] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 407 - 413

[8] HOPKINS CG, 1984, P MAT RES SOC S, V25, P87

[9] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[10] RAPID THERMAL ANNEALING AND TITANIUM SILICIDE FORMATION [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (01): : 23 - 29

[1] TRANSIENT ANNEALING AS A TOOL FOR THE INVESTIGATION OF THIN-FILM SUBSTRATE SOLID-PHASE REACTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1234 - 1239

[2] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[3] GROWTH-KINETICS OF PD2SI FROM EVAPORATED AND SPUTTER-DEPOSITED FILMS [J]. THIN SOLID FILMS, 1981, 79 (01) : 51 - 60

[4] CHEUNG NW, 1980, ELECTROCHEMICAL S PV, V802, P494

[5] COHEN SA, 1984, MATER RES SOC S P, V23, P321

[6] DHEURLE FM, 1986, P MAT RES SOC S, V52, P261

[7] STUDY OF PD2SI FILMS ON SILICON USING AUGER-ELECTRON SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1976, 19 (05) : 407 - 413

[8] HOPKINS CG, 1984, P MAT RES SOC S, V25, P87

[9] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[10] RAPID THERMAL ANNEALING AND TITANIUM SILICIDE FORMATION [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (01): : 23 - 29