RAPID THERMAL ANNEALING AND TITANIUM SILICIDE FORMATION

被引：27

作者：

LEVY, D

PONPON, JP

GROB, A

GROB, JJ

STUCK, R

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 38卷 / 01期

关键词：

D O I：

10.1007/BF00618722

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：23 / 29

页数：7

共 17 条

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[5] LARSEN AN, 1983, ENERGY BEAM SOLID IN, V23, P727
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03): : 141 - 144
[7] MCPHERSON J, 1983, ELECTRONIC MATERIALS
[8] OXYGEN REDISTRIBUTION DURING SINTERING OF TI/SI STRUCTURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 762 - 765
[9] THIN-FILM INTERACTION BETWEEN TITANIUM AND POLYCRYSTALLINE SILICON
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[10] INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING
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