RAPID THERMAL ANNEALING OF CO-SPUTTERED TANTALUM SILICIDE FILMS

被引：11

作者：

KWONG, DL

机构：

[1] Univ of Notre Dame, Dep of, Electrical Engineering, Notre Dame,, IN, USA, Univ of Notre Dame, Dep of Electrical Engineering, Notre Dame, IN, USA

来源：

关键词：

D O I：

10.1016/0040-6090(84)90523-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TANTALUM COMPOUNDS

引用

页码：43 / 50

页数：8

共 12 条

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[2] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING
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STACY, WT
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (07): : 179 - 181
[3] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES
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ISHAQ, MH
KOBURGER, CW
WHITE, FR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424
[4] Gibbons J. F., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P37
[5] Kwong D. L., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P733
[6] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS
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FRASER, DB
SINHA, AK
LEVINSTEIN, HJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417
[7] MURARKA SP, 1983, SILICIDES VLSI APPLI
[8] SHORT-TIME ANNEALING
SEDGWICK, TO
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493
[9] SEDGWICK TO, 1983, 1983 P EL SOC SPRING
[10] MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES
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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 490 - 495