INFLUENCE OF THE INTERFACIAL OXIDE ON TITANIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING

被引：43

作者：

PRAMANIK, D ^{[1
]}

SAXENA, AN ^{[1
]}

WU, OK ^{[1
]}

PETERSON, GG ^{[1
]}

TANIELIAN, M ^{[1
]}

机构：

[1] GOULD INC,RES CTR,ROLLING MEADOWS,IL 60008

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期

关键词：

D O I：

10.1116/1.582878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：775 / 780

页数：6

共 13 条

[1] AMANO J, 1984, UNPUB P WORKSHOP REF
[2] BEYERS R, UNPUB J APPL PHYS
[3] THE EFFECT OF PHOSPHORUS ION-IMPLANTATION ON MOLYBDENUM-SILICON CONTACTS
CHIANG, SW
CHOW, TP
REIHL, RF
WANG, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4027 - 4032
[4] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION
CHU, WK
LAU, SS
MAYER, JW
MULLER, H
[J]. THIN SOLID FILMS, 1975, 25 (02) : 393 - 402
[5] KINETICS OF TISI2 FORMATION BY THIN TI FILMS ON SI
HUNG, LS
GYULAI, J
MAYER, JW
LAU, SS
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5076 - 5080
[6] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[7] LAU CK, 1983, ECS DIG EXT ABSTR, V83, P567
[8] NAGASAWA E, 1982, 1982 S VLSI TECHN OS
[9] PRAMANIK D, 1983, SOLID STATE TECHNOL, V26, P127
[10] PRAMANIK D, 1984, ECS DIG EXT ABSTR, V84, P769