LOCAL DENSITY OF STATES IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES .2. FINITE-WIDTH BARRIERS

被引：12

作者：

BRUNO, JD

BAHDER, TB

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.39.3659

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3659 / 3663

页数：5

共 12 条

[1] LOCAL DENSITY OF STATES IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES [J].

BAHDER, TB ;

BRUNO, JD ;

HAY, RG ;

MORRISON, CA .

PHYSICAL REVIEW B, 1988, 37 (11) :6256-6261

[2] RESONANT TUNNELING IN GAAS/AIAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BONNEFOI, AR ;

COLLINS, RT ;

MCGILL, TC ;

BURNHAM, RD ;

PONCE, FA .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :285-287

[3] LIMITING RESPONSE-TIME OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES [J].

BRUNO, JD ;

BAHDER, TB ;

MORRISON, CA .

PHYSICAL REVIEW B, 1988, 37 (12) :7098-7101

[4] COHERENT AND SEQUENTIAL TUNNELING IN SERIES BARRIERS [J].

BUTTIKER, M .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) :63-75

[5] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[6] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

OHNISHI, H ;

YOKOYAMA, N ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L577-L579

[7]

RICCO B, 1984, PHYS REV B, V29, P29

[8] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[9] NEW RESONANT TUNNELING DIODE WITH A DEEP QUANTUM-WELL [J].

TOYOSHIMA, H ;

ANDO, Y ;

OKAMOTO, A ;

ITOH, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09) :L786-L788

[10] TUNNELING IN A FINITE SUPERLATTICE [J].

TSU, R ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564

← 1 2 →