SOLID-STATE DETECTOR FOR LOW-ENERGY IONS

被引：5

作者：

HEINZ, O

GYORGY, EM

OHL, RS

机构：

来源：

关键词：

D O I：

10.1063/1.1715363

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：43 / 47

页数：5

共 7 条

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WARSHAW, SD .

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KINGSBURY, EF ;

OHL, RS .

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[3]

Lark-Horovitz K., P47

[4] PROPERTIES OF IONIC BOMBARDED SILICON [J].

OHL, RS .

BELL SYSTEM TECHNICAL JOURNAL, 1952, 31 (01) :104-121

[5] A NEW HIGH TEMPERATURE SILICON DIODE [J].

THORNTON, CG ;

HANLEY, LD .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (02) :186-188

[6]

Tolansky S., 1948, MULTIPLE BEAM INTERF

[7]

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