ANALYTICAL MODELING OF ULTRA-THIN FILM DEPLETION-MODE SOI MOSFETS

被引：7

作者：

BALESTRA, F

BRINI, J

GHIBAUDO, G

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs (URA-CNRS), Institut National Polytechnique, ENSERG, 38106 Grenoble

来源：

SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 12期

关键词：

D O I：

10.1016/0038-1101(91)90030-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliable analytical models for thin and ultra-thin film depletion-mode SOI MOSFETs have been developed. These models are based on the linearly varying potential (LVP) approximation in the Si film. They allow the understanding and optimization of electrical properties of these devices. In particular, the behaviour of the subthreshold swing and the transconductance is discussed and compared successfully with numerical simulation.

引用

页码：1361 / 1364

页数：4

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