MOSFET DEVICES WITH TRAPEZOIDAL GATES - I-V CHARACTERISTICS AND MAGNETIC SENSITIVITY

被引：3

作者：

RAO, GRM ^{[1
]}

CARR, WN ^{[1
]}

机构：

[1] SO METHODIST UNIV,DALLAS,TX 75222

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90186-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：483 / &

共 17 条

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[4]

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[6]

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MOLL, JL .

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[8] IMPROVED METHOD FOR MEASURING HALL COEFFICIENTS [J].

ISENBERG, I ;

RUSSELL, BR ;

GREENE, RF .

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[9]

LIPPMANN HJ, 1958, Z NATURFORSCH A, V13, P476

[10] IMPROVEMENT OF RELAXATION METHOD FOR HALL PLATES [J].

MIMIZUKA, T .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :107-&

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