EFFECT OF UNIAXIAL STRESS ON ENERGY-LOSS AND SCATTERING MECHANISM IN P-TYPE SILICON

被引：4

作者：

HESS, K

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1972年 / 33卷 / 01期

关键词：

D O I：

10.1016/S0022-3697(72)80061-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：139 / &

共 18 条

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[4]

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HESS, K ;

SEEGER, K .

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[8] MEASUREMENT OF PHENOMENOLOGICAL ENERGY RELAXATION TIME IN N-SI AT 77 DEGREES K LATTICE TEMPERATURE [J].

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[9] ENERGY RELAXATION OF WARM HOLES IN P-TYPE TELLURIUM [J].

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[10]

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