PHOTODETECTORS MONOLITHICALLY INTEGRATED WITH OPTICAL WAVE-GUIDES - THEORETICAL AND EXPERIMENTAL-STUDY OF ABSORBING LAYER EFFECTS

被引：11

作者：

VINCHANT, JF

机构：

[1] CNRS, France

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1989年 / 136卷 / 01期

关键词：

Photodetectors - Semiconducting Gallium Arsenide - Waveguides; Optical;

D O I：

10.1049/ip-j.1989.0014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a model for the study of photodetectors monolithically integrated with optical waveguides. We have investigated how an absorbing layer influences the propagation constants of the modes of optical waveguides, by developing a four layer model with refractive indices in each layer. Comparisons with experimental results obtained with devices made in our laboratory and elsewhere show a good agreement. We have used this model to predict and fabricate a short length GaInAs photoconductor monolithically integrated with GaAs/GaAlAs waveguide on GaAs semi-insulating substrate. Experimental results are analyzed using this model.

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页码：72 / 75

页数：4

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