ORDERING AND DISORDERING OF DOPED GA0.5IN0.5P

被引：27

作者：

KURTZ, SR

OLSON, JM

FRIEDMAN, DJ

KIBBLER, AE

ASHER, S

机构：

[1] National Renewable Energy Laboratory, Golden, 80401, CO

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 05期

关键词：

BAND GAP; GAINP; ORDER-DISORDER;

D O I：

10.1007/BF02671225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band gap of Ga0.5In0.5P is reported as a function of doping level and growth rate. The lowest band gaps are obtained for hole concentrations of about 2 x 10(17) cm-3. For samples doped p-type above 1 x 10(18) cm-3, the band gap increases dramatically, regardless of growth rate. This effect is shown to be the result of disordering during growth rather than a change in the equilibrium surface structure with doping. The doping level dependence of the band gap of Ga0.5In0.5P samples grown at higher and lower growth rates differs for selenium and zinc doping even though the effects of high doping are the same for both dopants.

引用

页码：431 / 435

页数：5