PHOTOLUMINESCENCE OF INGAP/GAAS (111) LPE LAYERS WITH ELASTIC STRAIN DUE TO LATTICE MISMATCH

被引：3

作者：

KATO, T

MATSUMOTO, T

ISHIDA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 06期

关键词：

D O I：

10.1143/JJAP.26.893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：893 / 896

页数：4

共 15 条

[11] EFFECT OF LATTICE MISMATCH ON THE SOLIDUS COMPOSITIONS OF GAXIN1-XP LIQUID-PHASE EPITAXIAL CRYSTALS
OHTA, J
ISHIKAWA, M
ITO, R
OGASAWARA, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03): : L136 - L138
[12] OLSEN GH, 1978, J APPL PHYS, V49
[13] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI
POLLAK, FH
CARDONA, M
[J]. PHYSICAL REVIEW, 1968, 172 (03): : 816 - &
[14] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS
STRINGFELLOW, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3455 - +
[15] PHOTO-LUMINESCENCE AND LATTICE MISMATCH IN INGAAS/INP
YAGI, T
FUJIWARA, Y
NISHINO, T
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L467 - L469