THE SELECTIVELY GROWN PERMEABLE JUNCTION BASE TRANSISTOR WITH A GATE OF HIGHLY CARBON-DOPED GAAS

The homoepitaxial permeable junction base transistor (PJBT) is a new device concept that exploits two main advantages of metalorganic molecular beam epitaxy (MOMBE): the possibility of high p-type doping and selective growth. The device structure is described and the demands on epitaxial growth are investigated. Excellent selective growth of the channels is achieved if the strong dependence of the morphology of the channels on their orientation with respect to the surface is taken into account. The observed difference of the DC characteristics for two contact configurations can be explained by the velocity overshoot. Finally, the high frequency performance of a non-optimized device is presented.