INFLUENCE OF LOCAL ENVIRONMENT ON BOUND EXCITONS AND BOUND EXCITONIC MOLECULES IN III-V-ALLOYS .1. THEORY AND NUMERICAL RESULTS FOR GAAS1-CHI-P-CHI-N

被引:3
作者
MULLER, HJ
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 132卷 / 01期
关键词
D O I
10.1002/pssb.2221320124
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:239 / 254
页数:16
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共 13 条
[1]  
Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
[2]   BINDING TO ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J].
BALDERESCHI, A ;
HOPFIELD, JJ .
PHYSICAL REVIEW LETTERS, 1972, 28 (03) :171-+
[3]   ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP [J].
CHEN, AB ;
SHER, A .
PHYSICAL REVIEW B, 1981, 23 (10) :5360-5374
[4]   EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J].
COHEN, E ;
STURGE, MD .
PHYSICAL REVIEW B, 1977, 15 (02) :1039-1051
[5]   DISORDER-INDUCED BROADENING FOR FREE DIRECT EXCITONS IN II-VI AND III-V SEMICONDUCTING MIXED-CRYSTALS [J].
HENNIG, D ;
STREHLOW, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (01) :283-288
[6]   NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE [J].
HSU, WY ;
DOW, JD ;
WOLFORD, DJ ;
STREETMAN, BG .
PHYSICAL REVIEW B, 1977, 16 (04) :1597-1615
[7]   NITROGEN STATES IN GA(AS,P) AND THE LONG-RANGE, SHORT-RANGE MODEL - A SYSTEMATIC STUDY [J].
KLEIMAN, GG ;
FRACASTORODECKER, M .
PHYSICAL REVIEW B, 1980, 21 (08) :3478-3490
[8]  
LAGUILLAUME CB, 1983, J PHYS LETT-PARIS, V44, pL53, DOI 10.1051/jphyslet:0198300440105300
[9]   LOCAL-ENVIRONMENT EFFECT ON THE NITROGEN BOUND-STATE IN GAPXAS1-X ALLOYS - EXPERIMENTS AND COHERENT-POTENTIAL APPROXIMATION-THEORY [J].
MARIETTE, H ;
CHEVALLIER, J ;
LEROUXHUGON, P .
PHYSICAL REVIEW B, 1980, 21 (12) :5706-5716
[10]   EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP [J].
MERZ, JL ;
FAULKNER, RA ;
DEAN, PJ .
PHYSICAL REVIEW, 1969, 188 (03) :1228-&