共 13 条
[1]
Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
[3]
ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP
[J].
PHYSICAL REVIEW B,
1981, 23 (10)
:5360-5374
[4]
EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP
[J].
PHYSICAL REVIEW B,
1977, 15 (02)
:1039-1051
[5]
DISORDER-INDUCED BROADENING FOR FREE DIRECT EXCITONS IN II-VI AND III-V SEMICONDUCTING MIXED-CRYSTALS
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1981, 107 (01)
:283-288
[6]
NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATURE
[J].
PHYSICAL REVIEW B,
1977, 16 (04)
:1597-1615
[7]
NITROGEN STATES IN GA(AS,P) AND THE LONG-RANGE, SHORT-RANGE MODEL - A SYSTEMATIC STUDY
[J].
PHYSICAL REVIEW B,
1980, 21 (08)
:3478-3490
[8]
LAGUILLAUME CB, 1983, J PHYS LETT-PARIS, V44, pL53, DOI 10.1051/jphyslet:0198300440105300
[9]
LOCAL-ENVIRONMENT EFFECT ON THE NITROGEN BOUND-STATE IN GAPXAS1-X ALLOYS - EXPERIMENTS AND COHERENT-POTENTIAL APPROXIMATION-THEORY
[J].
PHYSICAL REVIEW B,
1980, 21 (12)
:5706-5716
[10]
EXCITONIC MOLECULE BOUND TO ISOELECTRONIC NITROGEN TRAP IN GAP
[J].
PHYSICAL REVIEW,
1969, 188 (03)
:1228-&