THE FOUNDATION OF A CHARGE-SHEET MODEL FOR THE THIN-FILM MOSFET

被引：16

作者：

ORTIZCONDE, A ^{[1
]}

SANCHEZ, FJG ^{[1
]}

SCHMIDT, PE ^{[1
]}

SANETO, A ^{[1
]}

机构：

[1] INST VENEZOLANO INVEST CIENT,CARACAS 1020A,VENEZUELA

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 10期

关键词：

D O I：

10.1016/0038-1101(88)90021-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / 1500

页数：4

共 14 条

[1] ANALYTICAL IGFET MODEL INCLUDING DRIFT AND DIFFUSION CURRENTS [J].

BACCARANI, G ;

RUDAN, M ;

SPADINI, G .

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (02) :62-68

[2] DEEP DEPLETED SOI MOSFETS WITH BACK POTENTIAL CONTROL - A NUMERICAL-SIMULATION [J].

BALESTRA, F ;

BRINI, J ;

GENTIL, P .

SOLID-STATE ELECTRONICS, 1985, 28 (10) :1031-1037

[3] THE MISIM-FET IN THIN SEMICONDUCTOR LAYERS - DEPLETION-APPROXIMATION MODEL OF IV CHARACTERISTICS [J].

BARTH, PW ;

APTE, PR ;

ANGELL, JB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1717-1726

[4]

BARTH PW, 1980, SEL80JBA1 STANF EL L

[5] CHARGE-SHEET MODEL OF MOSFET [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355

[6] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246

[7] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :933-940

[8]

HSING CT, 1979, PHYS STATUS SOLIDI A, V56, P129, DOI 10.1002/pssa.2210560113

[9] NUMERICAL-ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFETS [J].

KATO, K ;

TANIGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :133-139

[10]

KITTEL C, 1980, THERMAL PHYSICS, P376

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