DEEP LEVELS IN SEMIINSULATING CDTE

被引：38

作者：

MORAVEC, P

HAGEALI, M

CHIBANI, L

SIFFERT, P

机构：

[1] Centre de Recherches Nucléaires, Laboratoire PHASE (UPR du CNRS 292), 67037 Strasbourg Cedex 2

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90049-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A general review on deep levels in CdTe created by doping of group IV elements and of 3d transition metal impurities is presented. We compare these data with some of our experimental results on Fe- and V-doped CdTe crystals. The problem of compensation is discussed.

引用

收藏

页码：223 / 227

页数：5

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