PHOTOELECTROCHEMISTRY AND SURFACE STUDIES OF COPPER INTERACTION WITH ROUGH SURFACES OF P-MOSE2

被引:10
作者
CASTRO, RJ
CABRERA, CR
机构
[1] Department of Chemistry, University of Puerto Rico, Puerto Rico 00931-3346, Rio Piedras
关键词
D O I
10.1149/1.2069088
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Layered materials of the type MoX2, where X is a chalcogenide, have been widely used in photoelectrochemical cells. Their two-dimensional structure makes these materials highly anisotropic in their electronic properties. The interaction of Cu2+ with the axial planes of p-MoSe2 have been studied by Auger electron spectroscopy as by photoelectrochemical methods. We present results on the photoelectrodeposition of Cu at rough surfaces (R) of p-MoSe2, i.e., surfaces having a high degree of axial planes exposed to the electrode/electrolyte interface. Cyclic voltammetry of Cu2+ at p-MoSe2 (R) showed a quasireversible electron transfer process at ca. 350 mV vs. SCE. Photoelectrodeposition of Cu at rough surfaces of p-MoSe2- was performed at 170 and 0 mV vs. saturated calomel electrode while the semiconductor was under illumination. Auger electron spectroscopy depth profiles of the surface, after the photoelectrodeposition of CU2+, indicates that at both potentials, and for long times of photoelectrodeposition, intercalation of Cu is occurring.
引用
收藏
页码:3385 / 3390
页数:6
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