EMITTER DIP EFFECT IN DOUBLE-DIFFUSED N-P-N SILICON TRANSISTORS

被引：9

作者：

MAEDA, M ^{[1
]}

TANIMOTO, M ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC ENGN,DEPT ELECTR,SAPPORO,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1002/pssa.2210160129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：273 / 278

页数：6

共 20 条

[1] VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J].

BARUCH, P ;

SAINTESPRIT, R ;

CONSTANTINESCU, C ;

PFISTER, JC .

DISCUSSIONS OF THE FARADAY SOCIETY, 1961, (31) :76-&

[2]

CERETH R, 1965, J ELECTROCHEM SOC, V112, P323

[3]

Friedel J., 1964, DISLOCATIONS

[4] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].

FROSCH, CJ ;

DERICK, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[6] COOPERATIVE DIFFUSION EFFECT [J].

LAWRENCE, JE .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4106-+

[7]

MAEDA M, 1966, B FACULTY ENGINEERIN, V41, P167

[8] DIFFUSION OF BORON INTO SILICON [J].

MAEKAWA, S ;

OSHIDA, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (03) :253-&

[9] MEASUREMENT OF THE ELASTIC CONSTANTS OF SILICON SINGLE CRYSTALS AND THEIR THERMAL COEFFICIENTS [J].

MCSKIMIN, HJ ;

BOND, WL ;

BUEHLER, E ;

TEAL, GK .

PHYSICAL REVIEW, 1951, 83 (05) :1080-1080

[10]

MILLEA MF, 1958, B AM PHYS SOC 2, V3, P102

← 1 2 →