IMPACT IONIZATION RATE IN GAAS

被引：59

作者：

STOBBE, M

REDMER, R

SCHATTKE, W

机构：

[1] CHRISTIAN ALBRECHTS UNIV KIEL,INST THEORET PHYS,D-24118 KIEL,GERMANY

[2] OREGON STATE UNIV,DEPT PHYS,CORVALLIS,OR 97331

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.49.4494

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impact ionization rate and its orientation dependence in k space is calculated for GaAs. The numerical results indicate a strong correlation to the band structure. The use of a q-dependent screening function for the Coulomb interaction between conduction and valence electrons is found to be essential. Comparison with recent results for Si, GaAs shows a harder threshold behavior. A simple fit formula is presented for easy calculation of the direction-dependent transition rate. With only the band structure as input the numerical results are closely reproduced in an arbitrary direction in the Brillouin zone.

引用

收藏

页码：4494 / 4500

页数：7

相关论文

共 31 条

[1] MEAN-VALUE POINT IN BRILLOUIN ZONE [J].

BALDERESCHI, A .

PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215

[2] THRESHOLDS OF IMPACT IONIZATION IN SEMICONDUCTORS [J].

BUDE, J ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) :3554-3561

[3] IMPACT IONIZATION IN SEMICONDUCTORS - EFFECTS OF HIGH ELECTRIC-FIELDS AND HIGH SCATTERING RATES [J].

BUDE, J ;

HESS, K ;

IAFRATE, GJ .

PHYSICAL REVIEW B, 1992, 45 (19) :10958-10964

[4] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS [J].

BULMAN, GE ;

ROBBINS, VM ;

STILLMAN, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2454-2466

[5] ELECTRON DRIFT VELOCITY IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

NAVA, F ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284

[6] OBSERVATION OF ELECTRONIC BAND-STRUCTURE EFFECTS ON IMPACT IONIZATION BY TEMPERATURE TUNING [J].

CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA ;

PEARSALL, TP .

PHYSICAL REVIEW LETTERS, 1977, 39 (11) :723-726

[7] TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION RATES IN GAAS BETWEEN 20-DEGREES AND 200-DEGREES-C [J].

CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA .

ELECTRONICS LETTERS, 1979, 15 (04) :117-118

[8] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[9] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[10] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

← 1 2 3 4 →