DOPING CONCENTRATIONS OF INDIUM-DOPED SILICON MEASURED BY HALL, C-V, AND JUNCTION-BREAKDOWN TECHNIQUES

被引：36

作者：

SCHRODER, DK

BRAGGINS, TT

HOBGOOD, HM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.324424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：5256 / 5259

页数：4

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共 13 条

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