HIGH-SPEED 1.55-MU-M GAINASP-INP MASS-TRANSPORT LASER DIODE ON SEMI-INSULATING SUBSTRATE

被引：5

作者：

ABE, Y

OHISHI, T

SUGIMOTO, H

OHTSUKA, K

MATSUI, T

OGATA, H

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 22期

关键词：

D O I：

10.1049/el:19891010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1505 / 1506

页数：2

共 5 条

[1] 1.54-MU-M PHASE-ADJUSTED INGAASP/INP DISTRIBUTED FEEDBACK LASERS WITH MASS-TRANSPORTED WINDOWS [J].

BROBERG, B ;

KOENTJORO, S ;

FURUYA, K ;

SUEMATSU, Y .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :4-6

[2] WIDE-BANDWIDTH MODULATION OF 3-CHANNEL BURIED-CRESCENT LASER-DIODES [J].

KOREN, U ;

EISENSTEIN, G ;

BOWERS, JE ;

GNAUCK, AH ;

TIEN, PK .

ELECTRONICS LETTERS, 1985, 21 (11) :500-501

[3]

KOREN U, 1982, IEEE J QUANTUM ELECT, V18, P1653, DOI 10.1109/TMTT.1982.1131303

[4] HIGH-SPEED OPERATION OF 1.5-MU-M GAINASP INP OPTOELECTRONIC INTEGRATED LASER DRIVERS [J].

SUZUKI, N ;

FURUYAMA, H ;

HIRAYAMA, Y ;

MORINAGA, M ;

EGUCHI, K ;

KUSHIBE, M ;

FUNAMIZU, M ;

NAKAMURA, M .

ELECTRONICS LETTERS, 1988, 24 (08) :467-468

[5]

Tucker R. S., 1985, IEEE T ELECTRON DEV, V32, P2527

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