THEORY OF SHALLOW DONOR IMPURITY NEAR-SURFACE STATES IN SI AND GE

被引：15

作者：

GODWIN, VE ^{[1
]}

TEFFT, WE ^{[1
]}

机构：

[1] UNIV MISSOURI, DEPT PHYS, ROLLA, MO 65401 USA

来源：

SURFACE SCIENCE | 1973年 / 34卷 / 01期

关键词：

D O I：

10.1016/0039-6028(73)90191-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：108 / 118

页数：11

共 16 条

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[4] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[5]

HALE EB, PRIVATE COMMUNICATIO

[6]

JACKSON JD, 1967, CLASSICAL ELECTRODYN, P111

[7] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].

KITTEL, C ;

MITCHELL, AH .

PHYSICAL REVIEW, 1954, 96 (06) :1488-1493

[8] THEORY OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 98 (04) :915-922

[9] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[10] NODAL HYDROGENIC WAVE FUNCTIONS OF DONORS ON SEMICONDUCTOR SURFACES [J].

LEVINE, JD .

PHYSICAL REVIEW, 1965, 140 (2A) :A586-&

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