DISSIPATION OF CONTACT ELECTRIFIED ELECTRONS ON DIELECTRIC THIN-FILMS WITH SILICON SUBSTRATE

被引：15

作者：

OKUSAKO, T ^{[1
]}

UCHIHASHI, T ^{[1
]}

NAKANO, A ^{[1
]}

IDA, T ^{[1
]}

SUGAWARA, Y ^{[1
]}

MORITA, S ^{[1
]}

机构：

[1] SHARP CO LTD,IC GRP,VLSI DEV LABS,TENRI 632,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 7A期

关键词：

CONTACT ELECTRIFICATION; CHARGE DEPOSITION; SIO2; SI3N4; MODIFIED ATOMIC FORCE MICROSCOPE; PHASE TRANSITION; SILICON OXIDE; NITRIDE-OXIDE-SILICON (NOS) SYSTEM;

D O I：

10.1143/JJAP.33.L959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied microscopic contact electrification on three different kinds of dielectric thin films with the same silicon substrate, i.e., SiO2/Si, Si3N4/SiO2/Si (NOS) and SiO2/Si3N4/SiO2/Si, using a modified atomic force microscope (AFM). From the results, we clarified that reproducible and controllable contact electrification is possible on each sample. From the time evolution of the peak values and full widths at half-maximum (FWHMs) of electrostatic force due to contact-electrified electrons, we found that the stable-unstable phase transition occurs only on SiO2/Si and SiO2/Si3N4/SiO2/Si thin films with the SiO2 surface.

引用

页码：L959 / L961

页数：3

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