EFFECT OF ETHANE ADDITION TO ARGON IN ETCHING OF BISRCACUO SUPERCONDUCTING THIN-FILMS

被引：1

作者：

OISHI, T ^{[1
]}

TAKAMI, T ^{[1
]}

KOJIMA, K ^{[1
]}

KURODA, K ^{[1
]}

WADA, O ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO, MAT & ELECTR DEVICES LAB, AMAGASAKI, HYOGO 661, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2A期

关键词：

BISRCACUO; SUPERCONDUCTING THIN FILM; DRY ETCHING; ETHANE; ARGON;

D O I：

10.1143/JJAP.32.L187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Addition of ethane to argon is found to be very useful in the dry etching of BiSrCaCuO superconducting thin films. BiSrCaCuO thin films are selectively etched with 2.4-20% ethane ratio, because hydrocarbon polymer thin films are deposited on resist masks. The morphology of the surface etched by ethane-argon mixture is smooth, while that by neat argon is rugged.

引用

页码：L187 / L189

页数：3

共 4 条

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