LONGITUDINAL MODE COMPETITION AND ASYMMETRIC GAIN SATURATION IN SEMICONDUCTOR INJECTION-LASERS .2. THEORY

被引：93

作者：

OGASAWARA, N

ITO, R

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 04期

关键词：

D O I：

10.1143/JJAP.27.615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 626

页数：12

共 22 条

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[7] MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERS
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