LONGITUDINAL MODE BEHAVIOR OF TRANSVERSE-MODE-STABILIZED INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER

被引：22

作者：

ISHIKAWA, H

IMAI, H

TANAHASHI, T

TAKUSAGAWA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：962 / 964

页数：3

相关论文

共 12 条

[1] VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERS
BROSSON, P
RIPPER, JE
PATEL, NB
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 273 - 280
[2] INGAASP-INP SEPARATED MULTICLAD LAYER STRIPE GEOMETRY LASERS EMITTING AT 1.5 UM
IMAI, H
ISHIKAWA, H
TANAHASHI, T
TAKUSAGAWA, M
[J]. ELECTRONICS LETTERS, 1981, 17 (01) : 17 - 19
[3] ISHIKAWA H, 1980, 7TH IEEE SEM LAS C B, P31
[4] SINGLE TRANSVERSE-MODE OPERATION OF TERRACED SUBSTRATE GAINASP-INP LASERS AT 1.3-MU-M WAVELENGTH
MORIKI, K
WAKAO, K
KITAMURA, M
IGA, K
SUEMATSU, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : 2191 - 2196
[5] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT
MUROTANI, T
OOMURA, E
HIGUCHI, H
NAMIZAKI, H
SUSAKI, W
[J]. ELECTRONICS LETTERS, 1980, 16 (14) : 566 - 568
[6] INP-GAINASP BURIED HETEROSTRUCTURE LASERS OF 1.5 MU-M REGION
NAGAI, H
NOGUCHI, Y
TAKAHEI, K
TOYOSHIMA, Y
IWANE, G
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : L218 - L220
[7] LONGITUDINAL-MODE BEHAVIORS OF MODE-STABILIZED ALXGA1-XAS INJECTION-LASERS
NAKAMURA, M
AIKI, K
CHINONE, N
ITO, R
UMEDA, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4644 - 4648
[8] REDUCTION IN RATE OF INCREASE OF SPONTANEOUS EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS AT THRESHOLD
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 101 - &
[9] SPECTRAL HOLE BURNING IN GAAS JUNCTION LASERS
PATEL, NB
BROSSON, P
RIPPER, JE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 330 - 331
[10] SAITO K, 1980, IEEE J QUANTUM ELECT, V16, P206