REACTIVE PARTIALLY IONIZED BEAM DEPOSITION OF BATIO3 THIN-FILMS

被引：21

作者：

LI, P ^{[1
]}

LU, TM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 22期

关键词：

D O I：

10.1063/1.104169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dual-source reactive partially ionized beam deposition has been employed to deposit thin BaTiO3 films on the Si(100) substrate at room temperature. It is shown that with a small amount (3%) of Ti and oxygen ions in the beam one can dramatically control the electrical properties of the films. From the capacitance versus voltage (C-V) characteristics, the flatband voltage and the total interface charge density were measured to be 0.3 V and 1×1011/cm2, respectively. These ferroelectric compound oxide thin films with high-dielectric constant are potentially useful in high density memory applications.

引用

页码：2336 / 2338

页数：3