SELF-CLEANING EFFECT IN PARTIALLY IONIZED BEAM DEPOSITION OF CU FILMS

被引:15
作者
YANG, GR
BAI, P
LU, TM
LAU, WM
机构
[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180
[2] UNIV WESTERN ONTARIO,LONDON N6A 5B7,ONTARIO,CANADA
关键词
D O I
10.1063/1.343954
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4519 / 4521
页数:3
相关论文
共 17 条
[1]   SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J].
ALMEN, O ;
BRUCE, G .
NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02) :279-289
[2]   EPITAXIAL-GROWTH OF AL(111) SI(111) FILMS USING PARTIALLY IONIZED BEAM DEPOSITION [J].
CHOI, CH ;
HARPER, RA ;
YAPSIR, AS ;
LU, TM .
APPLIED PHYSICS LETTERS, 1987, 51 (24) :1992-1994
[3]  
Fraser D. B., 1983, VLSI technology, P347
[4]   SPUTTERING YIELD MEASUREMENTS WITH LOW-ENERGY METAL ION BEAMS [J].
HAYWARD, WH ;
WOLTER, AR .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2911-&
[5]  
Hu C. K., 1986, P 3 INT VLSI MULT IN, P181
[6]  
KERN W, 1970, RCA REV, V31, P187
[7]   EXTENDED BULK DEFECTS INDUCED BY LOW-ENERGY IONS DURING PARTIALLY IONIZED BEAM DEPOSITION [J].
LEE, WI ;
WONG, J ;
BORREGO, JM ;
LU, TM .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :2206-2208
[8]   A HIGH IONIZATION EFFICIENCY SOURCE FOR PARTIALLY IONIZED BEAM DEPOSITION [J].
MEI, SN ;
LU, TM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01) :9-12
[9]  
MURARKA SP, 1989, ELECTRONIC MATERIALS, P267
[10]   ROOM-TEMPERATURE COPPER METALLIZATION FOR ULTRALARGE-SCALE INTEGRATED-CIRCUITS BY A LOW KINETIC-ENERGY PARTICLE PROCESS [J].
OHMI, T ;
SAITO, T ;
SHIBATA, T ;
NITTA, T .
APPLIED PHYSICS LETTERS, 1988, 52 (26) :2236-2238