A HIGH IONIZATION EFFICIENCY SOURCE FOR PARTIALLY IONIZED BEAM DEPOSITION

被引：43

作者：

MEI, SN ^{[1
]}

LU, TM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12181

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.574977

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：9 / 12

页数：4

共 11 条

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[2] HARPER JME, 1984, ION BOMBARDMENT MODI, P127
[3] ANTIMONY CONCENTRATION IN SILICON EPITAXIAL LAYER FORMED BY PARTIALLY IONIZED VAPOR-DEPOSITION
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[4] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) : 553 - 557
[5] MEI SN, UNPUB METAL CLUSTER
[6] SIMULTANEOUS RHEED-AES-QMS STUDY ON EPITAXIAL SI FILM GROWTH ON SI(111) AND SAPPHIRE (-1102) SURFACES BY PARTIALLY IONIZED VAPOR-DEPOSITION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 366 - 368
[7] UNIDIRECTIONAL DEPOSITION OF ALUMINUM USING NOZZLE JET BEAM TECHNIQUE
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WONG, J
MEI, SN
LU, TM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 359 - 362
[8] A LOW-ENERGY, ULTRAHIGH-VACUUM, SOLID-METAL ION-SOURCE FOR ACCELERATED-ION DOPING DURING MOLECULAR-BEAM EPITAXY
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GREENE, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 306 - 313
[9] ION-SURFACE INTERACTIONS DURING THIN-FILM DEPOSITION
TAKAGI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 382 - 388
[10] NOZZLE BEAM DEPOSITION OF SIO2-FILMS
WONG, J
LU, TM
MEHTA, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 453 - 456

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