INTERFACE SHAPE OBSERVATION AND CALCULATION IN CRYSTAL-GROWTH OF CDTE BY THE VERTICAL BRIDGMAN METHOD

被引：46

作者：

PFEIFFER, M

MUHLBERG, M

机构：

[1] Institut für Kristallographie und Materialforschung, Fachbereich Physik, Humboldt-Universität zu Berlin, D-O- 1040 Berlin

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 118卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90071-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The vertical Bridgman method is the most favored growth process for CdTe. However, the crystals include a large number of defects. Observations and calculations show a changing interface shape at several stages of growth. An optimization of the aspect ratio of the ingot can lead to more monocrystalline material because of the diminishing influence of the end effects.

引用

页码：269 / 276

页数：8

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