PHASE-TRANSFORMATION AND PREFERRED ORIENTATION IN CARBOXYLATE DERIVED ZRO2 THIN-FILMS ON SILICON SUBSTATES

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450-degrees-C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550-degrees-C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700-degrees-C and became significant only at 900-degrees-C, but for films thicker than 0.5 mum, overall preferred orientation exceeded 90%.