THEORY OF SOME EFFECTS OF PHOTON RECYCLING IN SEMICONDUCTORS

被引:30
作者
BADESCU, V
LANDSBERG, PT
机构
[1] UNIV SOUTHAMPTON,FAC MATH STUDIES,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND
[2] INST POLYTECH GH GHEORGHIU DEJ,R-79590 BUCHAREST,ROMANIA
[3] UNIV SOUTHAMPTON,CTR SOLAR ENERGY,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND
关键词
D O I
10.1088/0268-1242/8/7/014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of photon recycling (or self-excitation) in semiconductors is established theoretically for the minority carrier lifetime, the minority carrier diffusion coefficient and an electric field parameter, for a wide range of physical situations. These include absorption coefficients, reflection coefficients at the boundary of the semiconductor (and therefore the refractive indices), semiconductor layer thickness and internal quantum efficiency. The new features of this work are: the inclusion of the dependence on the incidence angle of the reflection coefficients, an improved but fairly simple derivation of the corrections to the observable quantities due to photon recycling, and the effect of photon recycling on the electric field. As already known, the most important effects are on the lifetime, whereas the diffusion coefficient is relatively insensitive to photon recycling. It is pointed out here that the effect can, however, be significant if the absorption length exceeds the diffusion length. In this case the effect on the electric field is also important and increases with the reflection coefficient.
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页码:1267 / 1276
页数:10
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