ANALYSIS OF THE HYSTERESIS IN THE IV CHARACTERISTICS OF VERTICALLY INTEGRATED, MULTIPEAKED RESONANT-TUNNELING DIODES

被引：14

作者：

KUO, TH ^{[1
]}

LIN, HC ^{[1
]}

POTTER, RC ^{[1
]}

SHUPE, D ^{[1
]}

机构：

[1] ALLIED SIGNAL AEROSP TECHNOL CTR,COLUMBIA,MD 21045

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hysteresis (extrinsic) and current-voltage (I-V) characteristics of the multiwell, vertically integrated, resonant-tunneling diode are analyzed. Our analysis shows that hysteresis in the vertically integrated diode I-V can result from interchanging the order in which the devices switch, depending if the bias is increasing or decreasing. Experimental results are presented that support this analysis.

引用

收藏

页码：2496 / 2498

页数：3

相关论文

共 9 条

[1] QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J].

CAPASSO, F ;

SEN, S ;

BELTRAM, F ;

LUNARDI, LM ;

VENGURLEKAR, AS ;

SMITH, PR ;

SHAH, NJ ;

MALIK, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2065-2082

[2] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[3]

KUO TH, 1989, 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P567

[4]

KUO TH, 1989, 1989 P IEEE CORN C A, P265

[5]

PARK BG, 1989, 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P563

[6] A VERTICALLY INTEGRATED RESONANT TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCES [J].

POTTER, RC ;

LAKHANI, AA ;

HIER, HS ;

BEYEA, D ;

HEMPFLING, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2452-2453

[7] 3-DIMENSIONAL INTEGRATION OF RESONANT TUNNELING STRUCTURES FOR SIGNAL-PROCESSING AND 3-STATE LOGIC [J].

POTTER, RC ;

LAKHANI, AA ;

BEYEA, D ;

HIER, H ;

HEMPFLING, E ;

FATHIMULLA, A .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2163-2164

[8] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[9] THE BEHAVIOR OF FLIP-FLOPS USED AS SYNCHRONIZERS AND PREDICTION OF THEIR FAILURE RATE [J].

VEENDRICK, HJM .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (02) :169-176