STRUCTURE OF GA0.47IN0.53AS EPITAXIAL LAYERS GROWN ON INP SUBSTRATES AT DIFFERENT TEMPERATURES

被引：10

作者：

ZAKHAROV, ND ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

SWIDER, W ^{[1
]}

BROWN, AS ^{[1
]}

METZGER, R ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 20期

关键词：

D O I：

10.1063/1.110294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of defect structures and surface reconstruction of Ga0.47In0.53As epitaxial layers grown by molecular beam epitaxy on InP substrate have been investigated by TEM and RHEED over a wide growth temperature range (150 degrees C less than or equal to T-g less than or equal to 450 degrees C) before and after annealing. In the growth temperature range 400 degrees C less than or equal to T-g less than or equal to 450 degrees C, extensive segregation of In near the layer surface takes place. The maximum of In concentration was found to lie under the layer surface. The kinetic of surface pit formation after annealing was explained in terms of surface reconstruction and As clustering. Extensive As clustering was observed after annealing for the growth temperature range 175 degrees C less than or equal to T-g less than or equal to 300 degrees C. Analysis of diffuse scattering and dark-field images made it possible to propose an atomic model of cluster structure. Precipitate formation close to the interface was observed only for the samples grown at 150 degrees C and annealed at 500 degrees C. Differences in electrical properties between LT-grown GaAs and Ga0.47In0.53As are explained in terms of the structural defects.

引用

页码：2809 / 2811

页数：3

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