INFLUENCE OF ELLIPSOIDAL ENERGY SURFACES ON DIFFERENTIAL RESISTANCE OF SCHOTTKY BARRIERS

被引：17

作者：

STRATTON, R

PADOVANI, FA

机构：

来源：

PHYSICAL REVIEW | 1968年 / 175卷 / 03期

关键词：

D O I：

10.1103/PhysRev.175.1072

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1072 / &

共 6 条

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MAHAN, GD .

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[2] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

[3] TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J].

HARRISON, WA .

PHYSICAL REVIEW, 1961, 123 (01) :85-&

[4] DIFFERENTIAL RESISTANCE PEAKS OF SCHOTTKY BARRIER DIODES [J].

STRATTON, R ;

PADOVANI, FA .

[5]

STRATTON R, TO BE PUBLISHED

[6]

STRATTON R, 1966, SOLID STATE ELECTRON, V27, P1599