OXYGEN TRAPS IN EVAPORATED HYDROGENATED AMORPHOUS-SILICON

被引:1
作者
UKAH, CI [1 ]
PERZ, JM [1 ]
KRUZELECKY, RV [1 ]
ZUKOTYNSKI, S [1 ]
机构
[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
关键词
D O I
10.1016/0022-3093(89)90476-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:301 / 308
页数:8
相关论文
共 31 条
[1]  
BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P273
[2]   DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON [J].
CRANDALL, RS .
PHYSICAL REVIEW B, 1981, 24 (12) :7457-7459
[3]   EFFECT OF OXYGEN INCORPORATION ON PROPERTIES OF RF-SPUTTERED A-SI-H FILMS [J].
JIRANAPAKUL, K ;
SHIRAFUJI, J .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 81 (1-2) :29-40
[4]   ENERGY PLACEMENT OF THE D-DANGLING-BOND TRANSITION IN A-SI-H FROM PHOTOCAPACITANCE AND PHOTOCURRENT SPECTROSCOPIES [J].
JOHNSON, NM ;
JACKSON, WB .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :335-338
[5]  
JOHNSON NM, 1985, J NONCRYST SOLIDS, V78
[6]   ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J].
KNIGHTS, JC ;
STREET, RA ;
LUCOVSKY, G .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :279-284
[7]  
KNIGHTS JC, 1980, J NONCRYST SOLIDS, V36
[8]   INTERBAND OPTICAL-ABSORPTION IN AMORPHOUS-SILICON [J].
KRUZELECKY, RV ;
UKAH, C ;
RACANSKY, D ;
ZUKOTYNSKI, S ;
PERZ, JM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 103 (2-3) :234-249
[9]  
KRUZELECKY RV, 1987, THESIS U TORONTO
[10]   MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].
LANG, DV ;
COHEN, JD ;
HARBISON, JP .
PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320