RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES

被引：20

作者：

KITTLER, M ^{[1
]}

ULHAQBOUILLET, C ^{[1
]}

HIGGS, V ^{[1
]}

机构：

[1] UNIV LONDON KINGS COLL,LONDON WC2R 2LS,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 24卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(94)90296-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The recombination at misfit dislocations in Si(Ge) structures was studied by the technique of electron-beam-induced current. The contrast temperature dependence was interpreted using the Schokley-Read-Hall recombination theory. Different situations were observed: either a dominance of shallow centres (intrinsic property) or of midgap levels (contamination), or a combination of both. D-band luminescence studies support the role of contamination. The very small recombination at dislocations in as-grown material was interpreted as a passivation of the intrinsic activity.

引用

页码：52 / 55

页数：4

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