METAL-INDUCED DISLOCATION NUCLEATION FOR METASTABLE SIGE/SI

被引：34

作者：

HIGGS, V

KIGHTLEY, P

GOODHEW, PJ

AUGUSTUS, PD

机构：

[1] UNIV LIVERPOOL,LIVERPOOL L69 3BX,ENGLAND

[2] PLESSEY RES CASWELL,TOWCESTER NN12 8EQ,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new mechanism of misfit dislocation nucleation is demonstrated. Deliberate contamination with approximately 0.003 monolayers of Cu and subsequent annealing at 600-degrees-C is shown by transmission electron microscopy, photoluminescence, and defect etching to produce dislocation half loops in a 1.1-mu-m layer of Si0.93Ge0.07 on a silicon substrate.

引用

页码：829 / 831

页数：3

共 20 条

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[7] Higgs V., 1990, Materials Science Forum, V65-66, P351
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[9] INSITU OBSERVATIONS OF MISFIT DISLOCATION PROPAGATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1605 - 1607
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[J]. APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1900 - 1902

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