DETERMINATION OF SURFACE-STATE DISTRIBUTION FROM PULSED MOS CAPACITOR TRANSIENTS

被引：5

作者：

MANCHANDA, L ^{[1
]}

VASI, J ^{[1
]}

BHATTACHARYYA, AB ^{[1
]}

机构：

[1] INDIAN INST TECHNOL, CTR APPL RES ELECTR, DEPT ELECT ENGN, NEW DELHI 110029, INDIA

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 01期

关键词：

D O I：

10.1016/0038-1101(79)90167-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transient capacitance plots of metal oxide semiconductor capacitors are numerically computed taking into account the effect of the surface state distribution. For negligible minority carrier generation in the bulk and at the surface, the slope of a capacitance (C) vs time (t) curve is proportional to the surface state density. It is shown that a plot of t dC/dt vs ln t is a direct measure of the surface state density distribution. © 1979.

引用

页码：29 / 32

页数：4

共 7 条

[1]

Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

[3] ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR [J].

SCHRODER, DK ;

NATHANSON, HC .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :577-+

[4] THEORY OF TRANSIENT EMISSION CURRENT IN MOS DEVICES AND DIRECT DETERMINATION INTERFACE TRAP PARAMETERS [J].

SIMMONS, JG ;

WEI, LS .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :117-124

[5] TRANSIENT ISOTHERMAL GENERATION AT SILICON-SILICON OXIDE INTERFACE AND DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION [J].

SIMMONS, JG ;

MAR, HA .

SOLID-STATE ELECTRONICS, 1976, 19 (05) :369-374

[6]

ZAININGER KH, 1970, SOLID ST TECHNOL, V46

[7]

ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

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