TRANSIENT ISOTHERMAL GENERATION AT SILICON-SILICON OXIDE INTERFACE AND DIRECT DETERMINATION OF INTERFACE TRAP DISTRIBUTION

被引：12

作者：

SIMMONS, JG ^{[1
]}

MAR, HA ^{[1
]}

机构：

[1] UNIV TORONTO, ELECT ENGN DEPT, TORONTO M5S 1A7, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 05期

关键词：

D O I：

10.1016/0038-1101(76)90072-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：369 / 374

页数：6

共 13 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[2] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[3] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[4] DETERMINATION OF ENERGY-DISTRIBUTION OF INTERFACE TRAPS IN MIS SYSTEMS USING NON-STEADY-STATE TECHNIQUES [J].

MAR, HA ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :131-135

[5] SURFACE-GENERATION STATISTICS AND ASSOCIATED THERMAL CURRENTS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

MAR, HA ;

SIMMONS, JG .

PHYSICAL REVIEW B, 1975, 11 (02) :775-783

[6] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[7] LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].

NICOLLIAN, EH ;

GOETZBERGER, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :108-+

[8] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[9] THEORY OF NON-STEADY-STATE INTERFACIAL THERMAL CURRENTS IN MOS DEVICES, AND DIRECT DETERMINATION OF INTERFACIAL TRAP PARAMETERS [J].

SIMMONS, JG ;

TAYLOR, GW .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :125-130

[10] THEORY OF TRANSIENT EMISSION CURRENT IN MOS DEVICES AND DIRECT DETERMINATION INTERFACE TRAP PARAMETERS [J].

SIMMONS, JG ;

WEI, LS .

SOLID-STATE ELECTRONICS, 1974, 17 (02) :117-124

← 1 2 →