RELIABLE 1.3 MU-M HIGH-SPEED TRENCHED BURIED HETEROSTRUCTURE LASERS GROWN ENTIRELY BY ATMOSPHERIC MOVPE

被引:5
作者
LEALMAN, IF
COOPER, DM
MCILROY, PWA
COCKBURN, AJ
COLE, S
HARLOW, M
SKEATS, AP
机构
来源
IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 01期
关键词
D O I
10.1049/ip-j.1990.0002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper reports on reliable high-power wide-bandwidth 1.3 μm trenched buried heterostructure lasers grown by atmospheric MOVPE. The devices have bandwidths of up to 11 GHz and maintain excellent CW performance and long lifetimes. Data are presented for all of the above parameters, along with a discussion of the design considerations of the device structure.
引用
收藏
页码:2 / 6
页数:5
相关论文
共 15 条
  • [1] HIGH-FREQUENCY MODULATION OF 1.52 MU-M VAPOR-PHASE-TRANSPORTED INGAASP LASERS
    BOWERS, JE
    KOCH, TL
    HEMENWAY, BR
    WILT, DP
    BRIDGES, TJ
    BURKHARDT, EG
    [J]. ELECTRONICS LETTERS, 1985, 21 (07) : 297 - 299
  • [2] HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS
    BOWERS, JE
    HEMENWAY, BR
    GNAUCK, AH
    WILT, DP
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) : 833 - 844
  • [3] HIGH-SPEED, POLYIMIDE-BASED SEMIINSULATING PLANAR BURIED HETEROSTRUCTURES
    BOWERS, JE
    KOREN, U
    MILLER, BI
    SOCCOLICH, C
    JAN, WY
    [J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1263 - 1265
  • [4] HIGH-PERFORMANCE, HIGH-RELIABILITY BURIED HETEROSTRUCTURE LASERS BY MOVPE
    COOPER, DM
    COLE, S
    DEVLIN, WJ
    HOBBS, RE
    NELSON, AW
    REGNAULT, JC
    SKEATS, AP
    SIM, SP
    SPURDENS, PC
    [J]. ELECTRONICS LETTERS, 1988, 24 (09) : 519 - 521
  • [5] HIGH-SPEED 1.5-MU-M SELF-ALIGNED CONSTRICTED MESA LASERS GROWN ENTIRELY BY MOCVD
    HIRAYAMA, Y
    FURUYAMA, H
    MORINAGA, M
    SUZUKI, N
    KUSHIBE, M
    EGUCHI, K
    NAKAMURA, M
    [J]. ELECTRONICS LETTERS, 1988, 24 (08) : 452 - 454
  • [6] KAMITE K, 1986, ELECTRON LETT, V22, P407, DOI 10.1049/el:19860278
  • [7] KATO Y, 1986, I PHYS C SERIES, V83, P395
  • [8] FREQUENCY-RESPONSE OF AN INGAASP VAPOR-PHASE REGROWN BURIED HETEROSTRUCTURE LASER WITH 18 GHZ BANDWIDTH
    OLSHANSKY, R
    LANZISERA, V
    SU, CB
    POWAZINIK, W
    LAUER, RB
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 128 - 130
  • [9] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS
    OLSHANSKY, R
    HILL, P
    LANZISERA, V
    POWAZINIK, W
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) : 1410 - 1418
  • [10] SIM SP, 1988, IEE C PUBL 1, V292, P396