SPONTANEOUS EMISSION ENHANCEMENT IN PILLAR-TYPE MICROCAVITIES

被引：24

作者：

TEZUKA, T

NUNOUE, S

YOSHIDA, H

NODA, T

机构：

[1] Toshiba Research and Development Center, Kawasaki, 210, 1 Komukai Toshiba-cho, Saiwai-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

SEMICONDUCTOR LASER; MICROCAVITY; SPONTANEOUS EMISSION; TIME-RESOLVED PHOTOLUMINESCENCE; RADIATIVE RECOMBINATION; SURFACE RECOMBINATION;

D O I：

10.1143/JJAP.32.L54

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reduction in photoluminescence decay time of pillar-type microcavities was observed with decreasing the detuning between the resonance wavelength of the cavities and the luminescence peak wavelength of the active layers. The radiative recombination time was extracted from the measured photoluminescence decay time by a diffusion equation analysis. The obtained spontaneous emission enhancement factor was between 1.6 and 1.8. This is the first observation of a spontaneous emission enhancement in three-dimensionally confined semiconductor microcavities.

引用

页码：L54 / L57

页数：4

共 15 条

[11] RADIATIVE RECOMBINATION IN GAAS-ALXGA1-XAS QUANTUM DOTS [J].