共 42 条
- [1] TRANSFERABLE NONORTHOGONAL TIGHT-BINDING PARAMETERS FOR SILICON [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 859 - 862
- [2] [Anonymous], ELECTRONIC STRUCTURE
- [3] RECURSION, NONORTHOGONAL BASIS VECTORS, AND THE COMPUTATION OF ELECTRONIC-PROPERTIES [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (07): : 981 - 993
- [4] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (19) : 2001 - 2004
- [5] NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES [J]. PHYSICAL REVIEW B, 1987, 36 (12): : 6434 - 6445
- [6] CRITICAL-EVALUATION OF LOW-ORDER MOMENT EXPANSIONS FOR THE BONDING ENERGY OF LATTICES AND DEFECTS [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6125 - 6130
- [7] CALLAWAY J, 1974, QUANTUM THEORY SOL A, P291
- [8] CANEL LM, 1992, THESIS WASHINGTON U
- [9] GENERALIZED EMBEDDED-ATOM FORMAT FOR SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1990, 41 (02): : 1247 - 1250
- [10] ANGULAR FORCES IN GROUP-VI TRANSITION-METALS - APPLICATION TO W(100) [J]. PHYSICAL REVIEW B, 1991, 44 (13): : 6590 - 6597