ELECTROABSORPTION ENHANCEMENT IN TENSILE STRAINED QUANTUM-WELLS VIA ABSORPTION-EDGE MERGING

被引：15

作者：

GOMATAM, BN

ANDERSON, NG

机构：

[1] Department of Electrical and Computer Engineering, University of Massachusetts, Amherst

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/3.135302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroabsorption in quantum wells under biaxial tension is investigated theoretically. It is found that enhanced electroabsorption due to a field-induced merging of the light and heavy hole absorption edges can be achieved in these structures at moderate operating fields. Calculations showing this merging and electroabsorption enhancement for InxGa1-xAs-InP and GaAsxP1-x-Al0.35Ga0.65As quantum well structures are described. Tradeoffs involving the advantages of merged absorption edges are identified through comparisons of tensile strained modulators utilizing the merging effect with analogous lattice matched structures. Optimal structures for operation at 1.55-mu-m in InxGa1-xAs-InP and 0.77-mu-m in GaAsxP1-x-Al0.35Ga0.65As are identified, and the sensitivity of their electroabsorption characteristics to material and structural parameters are examined.

引用

页码：1496 / 1507

页数：12

共 34 条

[31] STRINGFELLOW GB, 1989, ORGANOMETALLIC VAPOR, pCH8
[32] VARIATIONAL CALCULATION OF POLARIZATION OF QUANTUM-WELL PHOTOLUMINESCENCE
TWARDOWSKI, A
HERMANN, C
[J]. PHYSICAL REVIEW B, 1987, 35 (15): : 8144 - 8153
[33] MULTIPLE QUANTUM WELL (MQW) WAVE-GUIDE MODULATORS
WOOD, TH
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (06) : 743 - 757
[34] EXTREMELY LOW-VOLTAGE FABRY-PEROT REFLECTION MODULATORS
YAN, RH
SIMES, RJ
COLDREN, LA
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (02) : 118 - 119

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