HIGH-PERFORMANCE ALL-SPUTTER DEPOSITED CU2S/CDS JUNCTIONS

被引：13

作者：

THORNTON, JA ^{[1
]}

ANDERSON, WW ^{[1
]}

机构：

[1] LOCKHEED AIRCRAFT CORP, RES LAB, PALO ALTO, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：622 / 624

页数：3

共 9 条

[1] ON RESOLVING THE ANOMALY OF INDIUM-TIN OXIDE SILICON JUNCTIONS [J].

ASHOK, S ;

FONASH, SJ ;

SINGH, R ;

WILEY, P .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :184-186

[2] THE DESIGN AND FABRICATION OF THIN-FILM CDS-CU2S CELLS OF 9.15-PERCENT CONVERSION EFFICIENCY [J].

BRAGAGNOLO, JA ;

BARNETT, AM ;

PHILLIPS, JE ;

HALL, RB ;

ROTHWARF, A ;

MEAKIN, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :645-651

[3] ELECTRICAL DEFECTS IN SILICON INTRODUCED BY SPUTTERING AND SPUTTER-ETCHING [J].

GRUSELL, E ;

BERG, S ;

ANDERSSON, LP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1573-1576

[4] THIN-FILM POLYCRYSTALLINE CU2S-CD1-XZNXS SOLAR-CELLS OF 10-PERCENT EFFICIENCY [J].

HALL, RB ;

BIRKMIRE, RW ;

PHILLIPS, JE ;

MEAKIN, JD .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :925-926

[5] EFFECTS OF SPUTTERING DAMAGE ON CHARACTERISTICS OF MOLYBDENUM-SILICON SCHOTTKY-BARRIER DIODES [J].

MULLINS, FH ;

BRUNNSCHWEILER, A .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :47-50

[6] THE CDS-CU2S SOLAR-CELL - BASIC OPERATION AND ANOMALOUS EFFECTS [J].

ROTHWARF, A .

SOLAR CELLS, 1980, 2 (02) :115-140

[7] ELECTRICAL AND PHOTO-VOLTAIC CHARACTERISTICS OF INDIUM-TIN OXIDE-SILICON HETEROJUNCTIONS [J].

THOMPSON, WG ;

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1978, 21 (04) :603-608

[8]

THORNTON JA, UNPUB J VAC SCI TECH

[9]

WYETH NC, 1979, J VAC SCI TECHNOL, V16, P1402, DOI 10.1116/1.570209

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